Supplemental Material: Engineering the Topological Surface States in (Sb2)m–Sb2Te3 Superlattice Series

نویسندگان

  • J. C. Johannsen
  • A. Crepaldi
  • S. Moser
  • B. Casarin
  • F. Cilento
  • M. Zacchigna
  • H. Berger
  • A. Magrez
  • Ph. Bugnon
  • J. Avila
  • M. C. Asensio
  • F. Parmigiani
  • O. V. Yazyev
چکیده

(Sb2)m–Sb2Te3 Superlattice Series J. C. Johannsen,1, ∗ G. Autès,2, 3, ∗ A. Crepaldi,4, ∗ S. Moser,1 B. Casarin,4, 5 F. Cilento,4 M. Zacchigna,4 H. Berger,1 A. Magrez,1 Ph. Bugnon,1 J. Avila,6 M. C. Asensio,6 F. Parmigiani,4, 5, 7 O. V. Yazyev,2, 3 and M. Grioni1, † 1Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland 2Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland 3National Center for Computational Design and Discovery of Novel Materials MARVEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland 4Elettra Sincrotrone Trieste S.C.p.A, Strada Statale 14, km 163.5, 34149 Basovizza, Trieste, Italy 5Università degli Studi di Trieste Via A. Valerio 2, Trieste 34127, Italy 6Synchrotron SOLEIL, Saint Aubin, BP 48 F-91192 Gif-sur-Yvette, France 7International Faculty University of Köln, 50937 Köln, Germany

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Strain-engineered diffusive atomic switching in two-dimensional crystals

Strain engineering is an emerging route for tuning the bandgap, carrier mobility, chemical reactivity and diffusivity of materials. Here we show how strain can be used to control atomic diffusion in van der Waals heterostructures of two-dimensional (2D) crystals. We use strain to increase the diffusivity of Ge and Te atoms that are confined to 5 Å thick 2D planes within an Sb2Te3-GeTe van der W...

متن کامل

Ambipolar field effect in the ternary topological insulator (Bi<sub><i>x</i></sub>Sb<sub>1-<i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> by composition tuning

Topological insulators exhibit a bulk energy gap and spin-polarized surface states that lead to unique electronic properties1–9, with potential applications in spintronics and quantum information processing. However, transport measurements have typically been dominated by residual bulk charge carriers originating from crystal defects or environmental doping10–12, and these mask the contribution...

متن کامل

Termination dependent topological surface states of the natural superlattice phase Bi

We describe the topological surface states of Bi4Se3, a compound in the infinitely adaptive Bi2-Bi2Se3 natural superlattice phase series, determined by a combination of experimental and theoretical methods. Two observable cleavage surfaces, terminating at Bi or Se, are characterized by angle resolved photoelectron spectroscopy and scanning tunneling microscopy, and modeled by ab-initio density ...

متن کامل

Topological states and phase transitions in Sb2Te3-GeTe multilayers

Topological insulators (TIs) are bulk insulators with exotic 'topologically protected' surface conducting modes. It has recently been pointed out that when stacked together, interactions between surface modes can induce diverse phases including the TI, Dirac semimetal, and Weyl semimetal. However, currently a full experimental understanding of the conditions under which topological modes intera...

متن کامل

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2015